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Preliminary Technical Information
HiperFET TM
Power MOSFET
Q3-Class
(Electrically Isolated Tab)
IXFR80N50Q3
V DSS
I D25
R DS(on)
t rr
=
=
≤
≤
500V
50A
72m Ω
250ns
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
ISOPLUS247
E153432
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
V GSS
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
500
500
± 30
V
V
V
V GSM
I D25
Transient
T C = 25 ° C
± 40
50
V
A
G
D
S
Isolated Tab
I DM
I A
E AS
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
240
80
5
A
A
J
G = Gate
S = Source
D
= Drain
dv/dt
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
50
V/ns
P D
T J
T JM
T stg
T L
T SOLD
V ISOL
F C
Weight
T C = 25 ° C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
570
-55 ... +150
150
-55 ... +150
300
260
2500
20..120/4.5..27
5
W
° C
° C
° C
° C
° C
V ～
N/lb.
g
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
Low Intrinsic Gate Resistance
2500V~ Electrical Isolation
Fast Intrinsic Rectifier
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
BV DSS V GS = 0V, I D = 3mA
Characteristic Values
Min. Typ. Max.
500
V
Applications
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 8mA
V GS = ± 30V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 125 ° C
3.5
6.5 V
± 200 nA
50 μ A
2 mA
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
R DS(on)
V GS = 10V, I D = 40A, Note 1
72 m Ω
? 2011 IXYS CORPORATION, All Rights Reserved
DS100323A(06/11)
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